Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS LDMOS) is proposed in this paper for first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on MOSFETs. This creative improved Voltage (BV) device, compared conventional Si LDMOS (Cov. LDMOS). In order to optimize trade-off between BV and Specific On-Resistance (RON,SP), SIPOS time paper. At On-State, due internal electric filed plate, majority carriers accumulation layer formed surface drift region LDMOS, which means RON,SP will be reduced. Meanwhile, modulation effect can make distribute evenly, leads an increase BV. addition, high-thermal conductivity SiC substrate, heat-dissipation efficiency device significantly improved. simulation results show that 428.4V, increased by 78.4% comparison Cov. (BV 240.0V) same structure parameters. R ON,SP decreased from 33.2m? · cm 2 24.0m? , 27.7%. Furthermore, figure-of-merit (FOM = /R xmlns:xlink="http://www.w3.org/1999/xlink">on,sp ) reaches 7.6MW/cm2, has enough performance break limit.